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IPP65R190CFD7XKSA1 Infineon MOSFET HIGH POWER NEW TO-220-3
IPP65R190CFD7
IPP65R190CFD
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Installation style: Through Hole
Package/Box: TO-220-3
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 650 V
Id-continuous drain current: 12 A
Rds On-drain-source on-resistance: 190 mOhms
Vgs - gate-source voltage: - 20 V, + 20 V
Vgs th-gate-source threshold voltage: 4.5 V
Qg-gate charge: 23 nC
Minimum operating temperature: - 40 C
Maximum operating temperature: +150 C
Pd-power dissipation: 63 W
Channel mode: Enhancement
Package: Tube
Packing quantity: 500 PCS
Part number alias: IPP65R190CFD7 SP005413377
