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F3L75R12W1H3_B27 SP001056132 Infineon IGBT Module LOW POWER EASY
F3L75R12W1H3B27BOMA1
Manufacturer: Infineon
Product Type: IGBT Modules
Configuration: 3-Phase Inverter
Collector-emitter maximum voltage VCEO: 1.2 kV
Collector-emitter saturation voltage: 1.45 V
Continuous collector current at 25 C: 45 A
Gate-emitter leakage current: 100 nA
Pd-power dissipation: 275 W
Package / Box: EasyPack1B
Minimum working temperature: - 40 C
Maximum working temperature: + 150 C
Package: Tray
Gate/emitter maximum voltage: 20 V
Series: High Speed IGBT H3
Packing Quantity: 24 PCS
Subcategory: IGBTs
Technology: Si
